Electron Transport Simulation Using Transfer Matrix Method

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F05%3A03114950" target="_blank" >RIV/68407700:21230/05:03114950 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Electron Transport Simulation Using Transfer Matrix Method

Original language description

The paper describes the properties of one dimensional simulator for modeling quantum electronic system with an arbitrary layered semiconductor structure. Actually, the simulator is being used for predicting the significant parameters of newly designed resonant tunneling diodes with structure containing band steps outside the barriers to decrease the interference between the emitter charge of free electrons and charge in the well leading to undesirable current plateau on the I-V diode characteristics.

Czech name

Simulace elektronového transportu s použitím metody Transfer Matrix

Czech description

Není k dispozici

Type

A - Audiovisual production

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2005

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

ISBN

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Place of publication

Praha

Publisher/client name

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Version

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Carrier ID

neuvedeno