Quantum Devices Transport Simulation Using Transfer Matrix Method
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F05%3A03114958" target="_blank" >RIV/68407700:21230/05:03114958 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Quantum Devices Transport Simulation Using Transfer Matrix Method
Original language description
The paper describes the properties of one dimensional simulator for modeling quantum electronic system with an arbitrary layered semiconductor structure. Actually, the simulator is being used for predicting the significant parameters of newly designed resonant tunneling diodes with structure containing band steps outside the barriers to decrease the interference between the emitter charge of free electrons and charge in the well leading to undesirable current plateau on the I-V diode characteristics.
Czech name
Simulace elektronového transportu s použitím metody Transfer Matrix
Czech description
Není k dispozici
Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GD102%2F03%2FH105" target="_blank" >GD102/03/H105: Modern methods of electronic circuit analysis, design and applications</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2005
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Modern Methods of Solutions, Designs and Applications of Electronic Devices
ISBN
80-214-3089-3
ISSN
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e-ISSN
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Number of pages
6
Pages from-to
91-96
Publisher name
Vysoké učení technické v Brně
Place of publication
Brno
Event location
Brno
Event date
Oct 24, 2005
Type of event by nationality
CST - Celostátní akce
UT code for WoS article
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