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Modeling of Evaporation of Thin Films Using DOE

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F06%3A00167865" target="_blank" >RIV/68407700:21230/06:00167865 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Modeling of Evaporation of Thin Films Using DOE

  • Original language description

    Technology of factorial experiments is used for simulation of evaporation of thin Ni films. Evaporated structures were examined from the point of view of the resistance and their thickness.

  • Czech name

  • Czech description

Classification

  • Type

    D - Article in proceedings

  • CEP classification

    JA - Electronics and optoelectronics

  • OECD FORD branch

Result continuities

  • Project

  • Continuities

    Z - Vyzkumny zamer (s odkazem do CEZ)

Others

  • Publication year

    2006

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    29th International Spring Seminar on Electronics Technology

  • ISBN

    978-1-4244-0550-3

  • ISSN

  • e-ISSN

  • Number of pages

    5

  • Pages from-to

  • Publisher name

    IEEE

  • Place of publication

    New York

  • Event location

    St. Marienthal

  • Event date

    May 10, 2006

  • Type of event by nationality

    WRD - Celosvětová akce

  • UT code for WoS article

    000246825800045