NEGF simulation of the RTD bistability
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F07%3A03130066" target="_blank" >RIV/68407700:21230/07:03130066 - isvavai.cz</a>
Alternative codes found
RIV/67985882:_____/07:00086590
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
NEGF simulation of the RTD bistability
Original language description
The simulation of I-V characteristics of Al0.3Ga0.7As-GaAs and AlAs-GaAs resonant tunneling diodes (RTD) is presented. The nonequilibrium Green function (NEGF) based 1D quantum transport simulator Wingreen is used in our case. The plateau region on the IV characteristics usually present only by the Wigner function equation (WFE) based simulation appeared now by the NEGF simulation of our AlAs-GaAs RTD and its shape is comparable with our experimental measurements.
Czech name
NEGF simulace bistabilit RTD
Czech description
Simulace IV charakteristik resonančních tunelových diod a porovnání s experimentem
Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA102%2F06%2F0381" target="_blank" >GA102/06/0381: Spintronic applications of ferromagnetic semiconductor nanostructures</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2007
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Computational Electronics
ISSN
1569-8025
e-ISSN
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Volume of the periodical
6
Issue of the periodical within the volume
1-3
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
4
Pages from-to
259-262
UT code for WoS article
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EID of the result in the Scopus database
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