Analysis of the resonant tunneling diode with the stepped prebarrier

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F09%3A00159114" target="_blank" >RIV/68407700:21230/09:00159114 - isvavai.cz</a>

Alternative codes found

RIV/67985882:_____/09:00346107

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Analysis of the resonant tunneling diode with the stepped prebarrier

Original language description

Resonant-tunnelling diodes (RTD) incorporating an emitter stepped pre-barrier are studied both theoretically and experimentally. The simulation of I-V characteristics of modified AlAs-GaAs double barrier RTD grown by molecular beam epitaxy with the stepped pre-barrier is presented. An 1D quantum transport simulator Wingreen based on the nonequilibrium Green functions (NEGF) is used in our case. Our result show that the coupling between energy levels in the emitter quantum-well and the main quantum wellleads to the plateau behaviour of the I-V curves. The two plateau regions on the I-V characteristics have been observed in experimental and simulation results.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2009

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Journal of Physics: Conference Series

ISSN

1742-6588

e-ISSN

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Volume of the periodical

193

Issue of the periodical within the volume

1

Country of publishing house

GB - UNITED KINGDOM

Number of pages

4

Pages from-to

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UT code for WoS article

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EID of the result in the Scopus database

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