An Accurate Gate-Delay Model for High Speed Digital and Analog Circuits

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F08%3A00146709" target="_blank" >RIV/68407700:21230/08:00146709 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
An Accurate Gate-Delay Model for High Speed Digital and Analog Circuits
Original language description
At present, most of simulation programs can characterize gate delays of microwave transistors. However, the delay is mostly approximated by means of a first-order differential equation only. In the paper, a more accurate way is suggested which is based on an appropriate second-order Bessel function. The delay model is implemented to a slightly but efficiently modified classic MESFET model. The proposed model does not create spurious oscillations that are typical for any LC approximations, and the simulation times are comparable with those obtained without the delay model. Properties of the implementation of the second-order Bessel function are demonstrated by an analysis of a tunable distributed microwave oscillator.
Czech name
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Czech description
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Project
<a href="/en/project/GA102%2F08%2F0784" target="_blank" >GA102/08/0784: Special methods of modeling and simulation of switched circuits</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2008
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Proceedings of the 2008 IEEE Dallas Circuits And Systems Workshop
ISBN
978-1-4244-2955-4
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
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Publisher name
IEEE
Place of publication
Piscataway
Event location
Dallas
Event date
Oct 19, 2008
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000264860900002

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