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NMOS and PMOS Translinear Multiplying Cell for Current-Mode Signal Processing

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F08%3A03147311" target="_blank" >RIV/68407700:21230/08:03147311 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    NMOS and PMOS Translinear Multiplying Cell for Current-Mode Signal Processing

  • Original language description

    Paper describes NMOS and PMOS translinear cell which multiplies the current signals and which can be used for the current-mode signal processing. The translinear cell consists of NMOS or PMOS transistors that are treated in the sub-threshold conduction region. In this region the transistors exhibit an exponential dependency of the drain current versus the gate voltage and thus the translinear principle can be used for description of the functionality. Operation region of the cell is limited by the validity of the exponential dependency and also by the transistors leakage currents. Significant error is also induced by the auxiliary current mirrors which are biasing the cells. Channel length modulation effect causes error of the input signals and thus the output signal is affected by the multiplicative error. Paper presents basic idea of the multiplying cell, presents results of simulations in CADENCE and also presents results of measurements on real structure composed using dis. tran.

  • Czech name

    NMOS a PMOS translineární násobičkové buňky pro zpracování signálu v proudovém módu

  • Czech description

    Článek popisuje NMOS a PMOS translineární obvodové buňky které jsou schopny násobit proudový signál. Buňky jsou udržovány v režimu podprahové vodivosti, proto vykazují exponenciální závislost proudu drainem na napětí na hradle. Operační rozsah buněk je omezen právě platností této exponenciální závislosti. Simulace byly provedeny pomocí programu CADENCE a měření pak na diskrétních tranzistorech.

Classification

  • Type

    D - Article in proceedings

  • CEP classification

    JA - Electronics and optoelectronics

  • OECD FORD branch

Result continuities

  • Project

  • Continuities

    Z - Vyzkumny zamer (s odkazem do CEZ)

Others

  • Publication year

    2008

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    ASDAM 2008 Conference Proceedings

  • ISBN

    978-1-4244-2325-5

  • ISSN

  • e-ISSN

  • Number of pages

    4

  • Pages from-to

  • Publisher name

    Slovak University of Technology

  • Place of publication

    Bratislava

  • Event location

    Smolenice

  • Event date

    Oct 12, 2008

  • Type of event by nationality

    WRD - Celosvětová akce

  • UT code for WoS article