Radiation hardness evaluation of the commercial 150 nm CMOS process using 60Co source

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F14%3A00225863" target="_blank" >RIV/68407700:21340/14:00225863 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1088/1748-0221/9/06/C06005" target="_blank" >http://dx.doi.org/10.1088/1748-0221/9/06/C06005</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/1748-0221/9/06/C06005" target="_blank" >10.1088/1748-0221/9/06/C06005</a>

Result language
angličtina
Original language name
Radiation hardness evaluation of the commercial 150 nm CMOS process using 60Co source
Original language description
We present a study of radiation effects on MOSFET transistors irradiated with a 60Co source to a total absorbed dose of 1.5 Mrad. The transistor test structures were manufactured using a commercial 150 nm CMOS process and are composed of transistors of different types (NMOS and PMOS), dimensions and insulation from the bulk material by means of deep n-wells. We have observed a degradation of electrical characteristics of both PMOS and NMOS transistors, namely a large increase of the leakage current of the NMOS transistors after irradiation.
Czech name
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Czech description
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Project
<a href="/en/project/TE01020069" target="_blank" >TE01020069: Advanced Detection Systems of Ionizing Radiation</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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