The Radiation Enhanced Diffusion (RED) Diode Realization of a Large Area p+p-n-n+ Structure with High SOA

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F09%3A00156565" target="_blank" >RIV/68407700:21230/09:00156565 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
The Radiation Enhanced Diffusion (RED) Diode Realization of a Large Area p+p-n-n+ Structure with High SOA
Original language description
We introduce a fully functional high voltage and high current p+p-n-n+ diode based on Radiation Enhanced Diffusion (RED) technology. The diode was processed on a 100 mm wafer and can safely turn off 4 and 7 kA @ 140oC @ 1500 A/us for the diameters of 51and 91 mm, resp. The RED diode has low leakage, excellent SOA capability under free-wheeling conditions, very good softness, and very high SOA with di/dt towards 10kA/us. Clamp-less operation is presented up to 1300 A with peak power above 15 MW at 125 oC for the 91 mm diodes.
Czech name
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Czech description
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Project
<a href="/en/project/LC06041" target="_blank" >LC06041: Preparation, modification and characterization of materials by energetic radiation.</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2009
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Proceedings of 21st International Symposium on Power Semiconductor Devices and ICs
ISBN
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ISSN
1943-653X
e-ISSN
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Number of pages
4
Pages from-to
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Publisher name
IEEE
Place of publication
Piscataway
Event location
Barcelona
Event date
Jun 14, 2009
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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