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High-Power Silicon p-i-n Diode With the Radiation Enhanced Diffusion of Gold

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F14%3A00213905" target="_blank" >RIV/68407700:21230/14:00213905 - isvavai.cz</a>

  • Result on the web

    <a href="http://ieeexplore.ieee.org" target="_blank" >http://ieeexplore.ieee.org</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1109/LED.2014.2298754" target="_blank" >10.1109/LED.2014.2298754</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    High-Power Silicon p-i-n Diode With the Radiation Enhanced Diffusion of Gold

  • Original language description

    Fast recovery p-i-n diode with anode p-n junction modified by the radiation-enhanced diffusion (RED) of gold is presented. The RED of gold is shown to provide the local lifetime control of excess carriers, the compensation of n-base doping profile from n-type to p-type, and the enhancement of concentration of two gold-related deep levels. The deep level Au-/0 (EC - 0.549 eV) controls the low-level lifetime, whereas the gold?hydrogen pair (EC - 0.215 eV) the high-level lifetime. This feature eliminates the drawback of negative temperature coefficient of forward voltage drop of the RED with palladium and platinum, where only a single deep level, which controls the high-level lifetime, is enhanced. The RED of gold provides the maximal reverse bias safe operation area at the annealing temperature of 600 °C, whereas the RED of palladium at 650 °C.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    BM - Solid-state physics and magnetism

  • OECD FORD branch

Result continuities

  • Project

  • Continuities

    Z - Vyzkumny zamer (s odkazem do CEZ)

Others

  • Publication year

    2014

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    IEEE Electron Device Letters

  • ISSN

    0741-3106

  • e-ISSN

  • Volume of the periodical

    35

  • Issue of the periodical within the volume

    3

  • Country of publishing house

    US - UNITED STATES

  • Number of pages

    3

  • Pages from-to

    375-377

  • UT code for WoS article

    000332029200028

  • EID of the result in the Scopus database