High-Power Silicon p-i-n Diode With the Radiation Enhanced Diffusion of Gold
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F14%3A00213905" target="_blank" >RIV/68407700:21230/14:00213905 - isvavai.cz</a>
Result on the web
<a href="http://ieeexplore.ieee.org" target="_blank" >http://ieeexplore.ieee.org</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/LED.2014.2298754" target="_blank" >10.1109/LED.2014.2298754</a>
Alternative languages
Result language
angličtina
Original language name
High-Power Silicon p-i-n Diode With the Radiation Enhanced Diffusion of Gold
Original language description
Fast recovery p-i-n diode with anode p-n junction modified by the radiation-enhanced diffusion (RED) of gold is presented. The RED of gold is shown to provide the local lifetime control of excess carriers, the compensation of n-base doping profile from n-type to p-type, and the enhancement of concentration of two gold-related deep levels. The deep level Au-/0 (EC - 0.549 eV) controls the low-level lifetime, whereas the gold?hydrogen pair (EC - 0.215 eV) the high-level lifetime. This feature eliminates the drawback of negative temperature coefficient of forward voltage drop of the RED with palladium and platinum, where only a single deep level, which controls the high-level lifetime, is enhanced. The RED of gold provides the maximal reverse bias safe operation area at the annealing temperature of 600 °C, whereas the RED of palladium at 650 °C.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
IEEE Electron Device Letters
ISSN
0741-3106
e-ISSN
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Volume of the periodical
35
Issue of the periodical within the volume
3
Country of publishing house
US - UNITED STATES
Number of pages
3
Pages from-to
375-377
UT code for WoS article
000332029200028
EID of the result in the Scopus database
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