Radiation Enhanced Diffusion of Nickel in Silicon Diodes
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F12%3A00194609" target="_blank" >RIV/68407700:21230/12:00194609 - isvavai.cz</a>
Result on the web
—
DOI - Digital Object Identifier
—
Alternative languages
Result language
angličtina
Original language name
Radiation Enhanced Diffusion of Nickel in Silicon Diodes
Original language description
High-power P-I-N diodes (2.5 kV, 150 A) with sputtered NiV and NiCr layers at anode were implanted by 10 MeV helium ions and subsequently annealed in the range 550 - 800 oC. The devices were characterized using XPS, DLTS and OCVD. Leakage current, forward voltage drop and reverse recovery measurements were measured as well. The Radiation Enhanced Diffusion (RED) of nickel was registered after 20 min. annealing between 675 and 725 oC. The evidence was provided by depth profiling (DLTS). The effect of theRED of nickel on device electrical parameters was evaluated. Contrary to the palladium, the RED of nickel is not sufficient for the local control of carrier lifetime in power devices.
Czech name
—
Czech description
—
Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
—
Result continuities
Project
—
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
ISPS'12 PROCEEDINGS
ISBN
978-80-01-05100-9
ISSN
—
e-ISSN
—
Number of pages
4
Pages from-to
1-4
Publisher name
České vysoké učení technické v Praze
Place of publication
Praha
Event location
Praha
Event date
Aug 28, 2012
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
—