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Molybdenum and low-temperature annealing of a silicon power P-i-N diode

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F11%3A00177777" target="_blank" >RIV/68407700:21230/11:00177777 - isvavai.cz</a>

  • Result on the web

    <a href="http://www.elsevier.com/" target="_blank" >http://www.elsevier.com/</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1016/j.microrel.2010.09.021" target="_blank" >10.1016/j.microrel.2010.09.021</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Molybdenum and low-temperature annealing of a silicon power P-i-N diode

  • Original language description

    High-power P+P-N-N+ diodes (VRRM = 2.5 kV, IFAV = 150 A) with sputtered Mo layer at anode were annealed in the range 550-800 C with and without the presence of radiation defects from helium implantation (10 MeV, 1 1012 cm2). The devices were characterized using DLTS, spreading resistance, OCVD lifetime, leakage current, forward voltage drop and reverse recovery measurements. The diffusion of Mo from the 50 nm thick surface layer was not registered even after 4 h between 550 and 800 C in a rough vacuum.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    BM - Solid-state physics and magnetism

  • OECD FORD branch

Result continuities

  • Project

  • Continuities

    Z - Vyzkumny zamer (s odkazem do CEZ)

Others

  • Publication year

    2011

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Microelectronics Reliability

  • ISSN

    0026-2714

  • e-ISSN

  • Volume of the periodical

    51

  • Issue of the periodical within the volume

    3

  • Country of publishing house

    NL - THE KINGDOM OF THE NETHERLANDS

  • Number of pages

    6

  • Pages from-to

    566-571

  • UT code for WoS article

    000288578200009

  • EID of the result in the Scopus database