Molybdenum and low-temperature annealing of a silicon power P-i-N diode
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F11%3A00177777" target="_blank" >RIV/68407700:21230/11:00177777 - isvavai.cz</a>
Result on the web
<a href="http://www.elsevier.com/" target="_blank" >http://www.elsevier.com/</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.microrel.2010.09.021" target="_blank" >10.1016/j.microrel.2010.09.021</a>
Alternative languages
Result language
angličtina
Original language name
Molybdenum and low-temperature annealing of a silicon power P-i-N diode
Original language description
High-power P+P-N-N+ diodes (VRRM = 2.5 kV, IFAV = 150 A) with sputtered Mo layer at anode were annealed in the range 550-800 C with and without the presence of radiation defects from helium implantation (10 MeV, 1 1012 cm2). The devices were characterized using DLTS, spreading resistance, OCVD lifetime, leakage current, forward voltage drop and reverse recovery measurements. The diffusion of Mo from the 50 nm thick surface layer was not registered even after 4 h between 550 and 800 C in a rough vacuum.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Microelectronics Reliability
ISSN
0026-2714
e-ISSN
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Volume of the periodical
51
Issue of the periodical within the volume
3
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
6
Pages from-to
566-571
UT code for WoS article
000288578200009
EID of the result in the Scopus database
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