Low-Temperature Diffusion of Transition Metals at the Presence of Radiation Defects in Silicon

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F11%3A00183039" target="_blank" >RIV/68407700:21230/11:00183039 - isvavai.cz</a>

Result on the web

<a href="http://www.scientific.net/SSP.178-179.398" target="_blank" >http://www.scientific.net/SSP.178-179.398</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.4028/www.scientific.net/SSP.178-179.398" target="_blank" >10.4028/www.scientific.net/SSP.178-179.398</a>

Result language

angličtina

Original language name

Low-Temperature Diffusion of Transition Metals at the Presence of Radiation Defects in Silicon

Original language description

Low-temperature diffusion of Cr, Mo, Ni, Pd, Pt, and V in silicon diodes is compared in the range 450 - 800 degC. The devices were characterized using AES, XPS, DLTS, OCVD carrier lifetime and diode electrical parameters. The metal atoms are divided intotwo groups. The Pt and Pd form deep levels in increased extent at the presence of radiation defects above 600 degC, which reduces the excess carrier lifetime. It is shown as a special case that the co-diffusion of Ni and V from a NiV surface layer results fully in the concentration enhancement of the V atoms. The enhancement of the acceptor level V-/0 (EC - 0.203 eV) and donor level V0/+ (EC - 0.442 eV) resembles the behavior of substitutional Pts. The second group is represented by the Mo and Cr. Theyeasily form oxides, which can make their diffusion into a bulk more difficult or impossible. Only a slight enhancement of the Cr-related deep levels by the radiation defects has been found above 700 degC.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

<a href="/en/project/LC06041" target="_blank" >LC06041: Preparation, modification and characterization of materials by energetic radiation.</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2011

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Solid State Phenomena

ISSN

1012-0394

e-ISSN

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Volume of the periodical

178-179

Issue of the periodical within the volume

1

Country of publishing house

CH - SWITZERLAND

Number of pages

6

Pages from-to

421-426

UT code for WoS article

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EID of the result in the Scopus database

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