Doping Compensation for Increased Robustness of Fast Recovery Silicon Diodes

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F10%3A00160716" target="_blank" >RIV/68407700:21230/10:00160716 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Doping Compensation for Increased Robustness of Fast Recovery Silicon Diodes

Original language description

High-power diodes with the radiation enhanced diffusion (RED) of Pd are shown to have much higher ruggedness during the reverse recovery compared to that of the Pt. Anode doping profiles measured by spreading resistance technique after a 10 MeV He implantation with subsequent annealing between 500 and 800 degC reveal different compensation effects between the Pd and Pt. The in-diffusing Pd converts the n-type background doping concentration of ND = 3 .1013 cm-3 in the position of radiation defects to that of a p-type with about one order higher concentration. The created low-doped p-layer significantly increases ruggedness of diodes during reverse recovery.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

<a href="/en/project/LC06041" target="_blank" >LC06041: Preparation, modification and characterization of materials by energetic radiation.</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2010

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Microelectronics Reliability

ISSN

0026-2714

e-ISSN

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Volume of the periodical

50

Issue of the periodical within the volume

1

Country of publishing house

NL - THE KINGDOM OF THE NETHERLANDS

Number of pages

7

Pages from-to

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UT code for WoS article

000274610400004

EID of the result in the Scopus database

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