Study of Layers of Metal Nanoparticles on Semiconductor Wafers for Hydrogen Detection

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F11%3A00190637" target="_blank" >RIV/68407700:21340/11:00190637 - isvavai.cz</a>
Alternative codes found
RIV/67985882:_____/11:00374576
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Study of Layers of Metal Nanoparticles on Semiconductor Wafers for Hydrogen Detection
Original language description
In this work, colloid solutions of metal Pt, Pd and Pt/Pd alloy nanoparticles by reverse micelle technique in isooctane were prepared. Layers of the nanoparticles on InP and GaN substrates using electrophoretic deposition were prepared. Different coatingof semiconductor surface under different polarity of electrical field during electrophoretic deposition was investigated. Metal nanoparticles in the colloid and deposited metal nanoparticles were characterised by SEM. Schottky diodes were fabricated byapplication of colloidal graphite on nanoparticle layer. Diodes made with colloidal graphite exhibited better characteristics, than diodes with contacts made by other methods (evaporating, electrolysis). Diodes exhibited excellent current-voltage rectifying characteristics, the difference between forward and reverse current at 1 V was greather than 5 orders of magnitude. Schottky barier height of 1.03 eV was calculated for GaN-Pd structure and 0.78 eV for InP-Pd structure. A rapid increa
Czech name
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Czech description
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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