Modelling of sputtering yield amplification effect in reactive deposition of oxides

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F10%3A00168535" target="_blank" >RIV/68407700:21230/10:00168535 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Modelling of sputtering yield amplification effect in reactive deposition of oxides
Original language description
Many reactive sputter deposition applications require high deposition rates. The primary limiting parameters in magnetron sputtering are the target power dissipation and sputtering yields of the target elements. In reactive deposition of oxides, the deposition rate is of particular interest due to the low sputtering yield of most commonly used oxides. By doping the sputtering target with heavy elements, it is possible to substantially enhance the sputtering yield and hence the deposition rate. Simulations of the partial sputtering yield values for aluminium from doped targets sputtered in reactive atmosphere have been carried out. Our simulations indicate that the sputtering yield amplification in reactive sputtering may lead to much higher relative deposition rate increase than in a nonreactive case. The highest relative increase may be achieved in the transition region but substantial increase is predicted also in the oxide mode.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BL - Plasma physics and discharge through gases
OECD FORD branch
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Project
<a href="/en/project/GAP108%2F10%2F0218" target="_blank" >GAP108/10/0218: Advanced self-adaptive low friction coatings based on transition metal dichalcogenides alloyed with carbon</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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