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Selecting an Optimal Structure of Artificial Neural Networks for Characterizing RF Semiconductor Devices

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F10%3A00171283" target="_blank" >RIV/68407700:21230/10:00171283 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Selecting an Optimal Structure of Artificial Neural Networks for Characterizing RF Semiconductor Devices

  • Original language description

    In the paper, a method is suggested for modeling miscellaneous RF semiconductor devices by exclusive neural networks or by corrective neural networks working attached to a modified analytic model. An accuracy of the proposed modification of the analyticmodel is assessed by extracting model parameters of the AlGaAs/InGaAs/GaAs pHEMT. An accuracy of procedures with neural networks is generally assessed by extracting their parameters in static and dynamic domains. An approximation of the AlGaAs/InGaAs/GaAs pHEMT output characteristics is carried out by means of both exclusive and corrective artificial neural networks. A systematic sequence of analyses is also performed for examining an optimal structure of the artificial neural network from the point ofview its structure and complexity. The tests have been performed on both five- and four-layer artificial neural networks that serve for modeling a P-channel JFET and for the AlGaAs/InGaAs/GaAs pHEMT.

  • Czech name

  • Czech description

Classification

  • Type

    D - Article in proceedings

  • CEP classification

    IN - Informatics

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/GAP102%2F10%2F1614" target="_blank" >GAP102/10/1614: Memristive, memcapacitative, and meminductive systems: basic research, modeling, and simulation</a><br>

  • Continuities

    Z - Vyzkumny zamer (s odkazem do CEZ)

Others

  • Publication year

    2010

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    Proceedings of the 53rd IEEE International Midwest Symposium on Circuits and Systems

  • ISBN

    978-1-4244-7773-9

  • ISSN

    1548-3746

  • e-ISSN

  • Number of pages

    4

  • Pages from-to

  • Publisher name

    IEEE

  • Place of publication

    Piscataway

  • Event location

    Seattle, Washington

  • Event date

    Aug 1, 2010

  • Type of event by nationality

    WRD - Celosvětová akce

  • UT code for WoS article

    000287099800290