Characterization of Electronic Circuit Elements by Exclusive and Corrective Artificial Neural Networks

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F12%3A00193966" target="_blank" >RIV/68407700:21230/12:00193966 - isvavai.cz</a>

Result on the web

<a href="http://www.naun.org/multimedia/NAUN//mcs/index.html" target="_blank" >http://www.naun.org/multimedia/NAUN//mcs/index.html</a>

DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Characterization of Electronic Circuit Elements by Exclusive and Corrective Artificial Neural Networks

Original language description

At present, there are many novel electronic circuit elements for which their nonlinear models for CAD are necessary, especially for microwave ones. However, in the PSpice-family programs, only a class of several classic types of the MESFET model is available for the microwave area. In the paper, a novel reliable way is suggested for modeling various electronic structures by exclusive neural networks, or by corrective neural networks working attached to a modified analytic model. The accuracy of the proposed modification of the analytic model is assessed by extracting the model parameters of GaAs MESFET, AlGaAs/InGaAs/GaAs pHEMT, and GaAs microwave varactors. First, a precise approximation of the pHEMT output characteristics is carried out by means of both exclusive and corrective artificial neural networks; and second, an approximation of the capacitance (C-V) function of the SACM InGaAs/InP avalanche photodiode is performed by the exclusive neural network. Further, the Pt-TiO_(2-x)-Pt

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

<a href="/en/project/GAP102%2F10%2F1614" target="_blank" >GAP102/10/1614: Memristive, memcapacitative, and meminductive systems: basic research, modeling, and simulation</a><br>

Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)<br>S - Specificky vyzkum na vysokych skolach

Publication year

2012

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

International Journal of Mathematics and Computers in Simulation

ISSN

1998-0159

e-ISSN

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Volume of the periodical

6

Issue of the periodical within the volume

1

Country of publishing house

US - UNITED STATES

Number of pages

8

Pages from-to

136-143

UT code for WoS article

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EID of the result in the Scopus database

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