One-chip MOS Structure for Temperature Flow Sensor
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F10%3A00174271" target="_blank" >RIV/68407700:21230/10:00174271 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
One-chip MOS Structure for Temperature Flow Sensor
Original language description
There is described a MOS structure in the use of flow sensor system in the paper. MOS structure as a temperature sensor allows measurement of temperature gradient. One allows computation of direction of air flow over the structure chip. Four MOS structure of temperature sensors has been used for the design of sensitivity flow sensor. Different arrangements of MOS structure have been designed. Software standard tools have been used for simulation and modeling of structure properties. Maximum values of structure sensitivity in dependence on operating temperature have been computed. The parameters have been used for the design. Suitable structure temperature was found during simulations. Circuit connection of sensor temperature matrix was designed. New results of sensitivity and resolution of MOS sensor systems were obtained. The working efforts were focused on the sensitivity, angle resolution and small power consumption.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JB - Sensors, detecting elements, measurement and regulation
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA102%2F09%2F1601" target="_blank" >GA102/09/1601: Intelligent micro and nano structures for microsensors realized with support of nanotechnology</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
2010 Proceeding Nanotech, Clean Technology, Microtech, Bio nanotech
ISBN
978-1-4398-3421-3
ISSN
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e-ISSN
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Number of pages
3
Pages from-to
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Publisher name
Nano Science and Technology Institute
Place of publication
Boston
Event location
Anaheim
Event date
Jun 21, 2010
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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