Temperature Dependence of the Pyroelectric Behaviour in GaN/AlGaN

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F10%3A00174470" target="_blank" >RIV/68407700:21230/10:00174470 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Temperature Dependence of the Pyroelectric Behaviour in GaN/AlGaN
Original language description
So far the dependence of the spontaneous polarization coefficient for GaN and AlN on temperature has been measured to be minimal, which corresponds with expectation that the spontaneous polarization is reduced at the elevated temperatures of interest. There are also no reports on the piezoelectric polarization at higher temperature. This paper is initial study on the influence of temperature related behaviour in GaN/AlGaN. Summarize recent findings and consideration.
Czech name
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Czech description
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Project
<a href="/en/project/GA102%2F09%2F1601" target="_blank" >GA102/09/1601: Intelligent micro and nano structures for microsensors realized with support of nanotechnology</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Conference Proceedings of the Eighth International Conference on Advanced Semiconductor Devices and Microsystems
ISBN
978-1-4244-8572-7
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
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Publisher name
IEEE
Place of publication
Bratislava
Event location
Smolenice
Event date
Oct 24, 2010
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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