Design and Technology of High-Power Silicon Devices

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F11%3A00182234" target="_blank" >RIV/68407700:21230/11:00182234 - isvavai.cz</a>
Result on the web
<a href="http://www.mixdes.org/" target="_blank" >http://www.mixdes.org/</a>
DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Design and Technology of High-Power Silicon Devices
Original language description
Power semiconductors are playing a leading role in the power electronics systems,. The most important concepts of today's high-power devices are Phase Controlled Thyristor (PCT), Integrated Gate Commutated Thyristor (IGCT), Insulated Gate Bipolar Transistor (IGBT), and PiN diode. Silicon-based devices are still taking evolutionary steps to gradually increase the current and voltage ratings by utilizing the technologies well established in the IC industry. Beside the well-established Si technologies, thelow-power devices are increasingly utilizing the technologies of SiC and GaN. They are already on the market and in rapidly increasing volumes, but they still occupy only certain areas with relatively lower line voltages and output currents, where increased cost is balanced out by increased application demands.
Czech name
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Czech description
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Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
2011 Proceedings of the 18th International Conference
ISBN
978-83-932075-1-0
ISSN
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e-ISSN
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Number of pages
6
Pages from-to
17-22
Publisher name
Technical University of Lodz
Place of publication
Lodz
Event location
Gliwice
Event date
Jun 16, 2011
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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