Silicon Thyristors for Ultrahigh Power (GW) Applications (Invited Paper)

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F17%3A00307988" target="_blank" >RIV/68407700:21230/17:00307988 - isvavai.cz</a>

Result on the web

<a href="http://ieeexplore.ieee.org/document/7819558/" target="_blank" >http://ieeexplore.ieee.org/document/7819558/</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/TED.2016.2638476" target="_blank" >10.1109/TED.2016.2638476</a>

Result language

angličtina

Original language name

Silicon Thyristors for Ultrahigh Power (GW) Applications (Invited Paper)

Original language description

Evolution of thyristor technology and the design concepts, which brought and maintain the phase control thyristor (PCT) at the top of a power pyramid, are discussed. The state-of-the-art device concepts like electrically triggered thyristor and light triggered thyristor are described for voltage classes up to 8.5 kV and maximal onstate rated current of 6 kA. Main focus is laid on the PCTs for high-voltage direct current transmission, the enabler of power transmission beyond the 10-GW level.

Czech name

—

Czech description

—

Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

—

OECD FORD branch

20201 - Electrical and electronic engineering

Project

—

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2017

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

IEEE Transactions on Electron Devices

ISSN

0018-9383

e-ISSN

1557-9646

Volume of the periodical

64

Issue of the periodical within the volume

03

Country of publishing house

US - UNITED STATES

Number of pages

9

Pages from-to

760-768

UT code for WoS article

000396056700010

EID of the result in the Scopus database

2-s2.0-85009949457