Investigation of Reverse Bias Safe Operation Area of High-Power Fast Recovery Diodes
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F11%3A00194608" target="_blank" >RIV/68407700:21230/11:00194608 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Investigation of Reverse Bias Safe Operation Area of High-Power Fast Recovery Diodes
Original language description
The destruction limits of fast recovery power diodes under low and high currents are decisive for their reliable application. The former is limited by snap-off of current at the tail time of reverse recovery, the latter by dynamic avalanche. In this respect, we have investigated the diode which has been designed using the optimized anode and cathode doping profiles for reliable operation having nominal breakdown voltage of 4.5 kV. In this paper, we experimentally demonstrate the destruction limits for snap-off under hard turn-off conditions.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
POSTER 2011 - 15th International Student Conference on Electrical Engineering
ISBN
978-80-01-04806-1
ISSN
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e-ISSN
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Number of pages
2
Pages from-to
1-2
Publisher name
ČVUT, Fakulta elektrotechnická
Place of publication
Praha
Event location
Praha
Event date
May 12, 2011
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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