Gated Graphene Electrical Transport Characterization
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F12%3A00200396" target="_blank" >RIV/68407700:21230/12:00200396 - isvavai.cz</a>
Result on the web
<a href="http://radio.feld.cvut.cz/conf/poster2012/" target="_blank" >http://radio.feld.cvut.cz/conf/poster2012/</a>
DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Gated Graphene Electrical Transport Characterization
Original language description
Graphene is very interesting new material and promises attractive application in future nanodevices. It is 2D carbon structure with very interesting physical behavior. Graphene is nearly transparent material which has higher carrier mobility than any other material at room temperature. So graphene can be used in application such as ultrahigh-speed transistors and transparent electrodes. In this paper we present our first experiments of transport behavior of graphene at room temperature. We measured resistivity of prepared Hall-bar samples depending on gate voltage (back gated graphene). Hysteresis between forward and backward sweep direction was observed.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
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Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
POSTER 2012 - 16th International Student Conference on Electrical Engineering
ISBN
978-80-01-05043-9
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
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Publisher name
Czech Technical University in Prague
Place of publication
Praha
Event location
Prague
Event date
May 17, 2012
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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