Gated Graphene Electrical Transport Characterization

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F12%3A00197323" target="_blank" >RIV/68407700:21230/12:00197323 - isvavai.cz</a>

Result on the web

<a href="http://ctn.cvut.cz/ap/" target="_blank" >http://ctn.cvut.cz/ap/</a>

DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Gated Graphene Electrical Transport Characterization

Original language description

Graphene is a very interesting new material, and promises attractive applications in future nanodevices. It is a 2D carbon structure with very interesting physical behavior. Graphene is an almost transparent material that has higher carrier mobility thanany other material at room temperature. Graphene can therefore be used in applications such as ultrahigh-speed transistors and transparent electrodes. In this paper, we present our preliminary experiments on the transport behavior of graphene at room temperature. We measured the resistivity of Hall-bar samples depending on gate voltage (backgated graphene). Hysteresis between the forward and backward sweep direction was observed.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

<a href="/en/project/GAP108%2F11%2F0894" target="_blank" >GAP108/11/0894: Growth and processing of graphene layers on silicon carbide</a><br>

Continuities

S - Specificky vyzkum na vysokych skolach

Publication year

2012

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Acta Polytechnica

ISSN

1210-2709

e-ISSN

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Volume of the periodical

52

Issue of the periodical within the volume

5

Country of publishing house

CZ - CZECH REPUBLIC

Number of pages

4

Pages from-to

76-79

UT code for WoS article

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EID of the result in the Scopus database

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