AFM LOCAL ANODIC OXIDATION ON GRAPHENE

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F12%3A00200400" target="_blank" >RIV/68407700:21230/12:00200400 - isvavai.cz</a>
Result on the web
<a href="http://www.nanocon.cz/cz/" target="_blank" >http://www.nanocon.cz/cz/</a>
DOI - Digital Object Identifier
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Result language
angličtina
Original language name
AFM LOCAL ANODIC OXIDATION ON GRAPHENE
Original language description
Graphene is extensively studied attractive material for its remarkable electronic and mechanical properties. Local anodic oxidation (LAO) by means of atomic force microscope (AFM) with a conductive tip is a method used for device patterning in the nanometer scale at laboratory conditions. It represents a clean alternative to up-to-date nano-lithographic techniques as electron beam lithography (EBL) and nanoimprint lithography (NIL). Oxidation reaction between the tip and a conductive substrate creates an oxide line, which acts as a potential barrier. It enables to make narrow constrictions of 20 nm in width. We applied LAO on single-layer graphene CVD grown on copper foil and graphene grown on SiC prepared by high temperature annealing. Under optimum conditions for LAO the graphene oxide is created. The thickness of the oxide line depends on various parameters e.g. a tip bias, speed of the tip and ambient relative humidity.
Czech name
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Czech description
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Project
<a href="/en/project/GAP108%2F11%2F0894" target="_blank" >GAP108/11/0894: Growth and processing of graphene layers on silicon carbide</a><br>
Continuities
S - Specificky vyzkum na vysokych skolach

Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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