Lithography on GaMnAs layer by AFM local anodic oxidation in the AC mode

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F10%3A00167197" target="_blank" >RIV/68407700:21230/10:00167197 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Lithography on GaMnAs layer by AFM local anodic oxidation in the AC mode

Original language description

The results on the local anodic oxidation (LAO) by conductive coated tip of an atomic force microscope (AFM) are presented. AFM LAO with modulated voltage (AC mode) on thin GaMnAs layer is performed. Oxide lines produce potential barrier capable to makenarrow constrictions for charge carriers. Oxide line height dependence on various parameters of the oxidation process is studied. Improvement in the homogeneity and reproducibility of oxide lines is observed. Lines up to 30 nm high are obtained. Magnetotransport measurement on constricted samples is realized.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

<a href="/en/project/KAN400100652" target="_blank" >KAN400100652: Structures for spintronics and quantum phenomena created by electron beam lithography</a><br>

Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)<br>S - Specificky vyzkum na vysokych skolach

Publication year

2010

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Microelectronic Engineering

ISSN

0167-9317

e-ISSN

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Volume of the periodical

87

Issue of the periodical within the volume

5-8

Country of publishing house

NL - THE KINGDOM OF THE NETHERLANDS

Number of pages

4

Pages from-to

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UT code for WoS article

000276300700096

EID of the result in the Scopus database

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