The AFM LAO lithography on GaMnAs layers

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F09%3A03151135" target="_blank" >RIV/68407700:21230/09:03151135 - isvavai.cz</a>

Alternative codes found

RIV/68407700:21230/09:00151135

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

The AFM LAO lithography on GaMnAs layers

Original language description

atomic force microscope (AFM). These oxide lines, produced by the negatively biased AFM tip, formed the electrical barrier to the conducting holes in the layer. The constricted samples were characterized at low temperature (12 K). They showed magnetoresistance effect specific for nanoconstrictions during in-plane magnetic field sweep in both polarities for the different mutual orientation of magnetic field and current. The LAO appears to become a useful patterning technique for research of ferromagneticsemiconductor nanostructures. Further optimization of LAO parameters for reaching better homogeneity of the oxide lines is needed.

Czech name

Litografie vrstev GaMnAs pomocí AFM

Czech description

Litografie vrstev GaMnAs pomocí AFM

Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2009

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Microelectronic Engineering

ISSN

0167-9317

e-ISSN

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Volume of the periodical

86

Issue of the periodical within the volume

4-6

Country of publishing house

NL - THE KINGDOM OF THE NETHERLANDS

Number of pages

4

Pages from-to

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UT code for WoS article

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EID of the result in the Scopus database

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