Nanostructures defined by the local oxidation of the ferromagnetic GaMnAs layer

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F09%3A03151139" target="_blank" >RIV/68407700:21230/09:03151139 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Nanostructures defined by the local oxidation of the ferromagnetic GaMnAs layer

Original language description

The results of local anodic oxidation (LAO) on the thin GaMnAs layers are reported. The ferromagnetic GaMnAs layers were prepared by low-temperature molecular beam epitaxy (MBE) growth in a Veeco Mod Gen II machine. The LAO process was performed with theatomic force microscope (AFM) Smena NT-MDT placed in the sealed box with the controlled humidity in the range 45-80%. The oxide was grown in the semi-contact mode of the AFM. The sample was positively biased with respect to the AFM tip with the bias from 6 to 24V. The conductive diamond-coated AFM tips with the radius 30nm were utilized for the oxidation. The tip speed during the oxidation was changed from 400 nm/s to 1.5 mm/s. The tip force was also changed during the oxidation. The height of oxide nanolines increases with applied voltage from 3 to 18 nm. The width of these lines was approximately 100 nm at half-maximum.

Czech name

Nanostruktury definované lokální anodickou oxidací fromagnetických vrstev GaMnAs

Czech description

Nanostruktury definované lokální anodickou oxidací fromagnetických vrstev GaMnAs

Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2009

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Microelectronics Journal

ISSN

0026-2692

e-ISSN

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Volume of the periodical

40

Issue of the periodical within the volume

4-5

Country of publishing house

GB - UNITED KINGDOM

Number of pages

9

Pages from-to

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UT code for WoS article

000265870200009

EID of the result in the Scopus database

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