High-temperature Signal Conditioner for Piezoresistive Strain Sensors

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F13%3A00209956" target="_blank" >RIV/68407700:21230/13:00209956 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
High-temperature Signal Conditioner for Piezoresistive Strain Sensors
Original language description
In the paper, strain-gauge sensor design and high temperature signal conditioner designed with HTCMOS operational amplifiers are presented. Amplifiers are based on SOI technology (Honeywell) to ensure high-temperature operation up to 225°C. The circuit is consist of three operational amplifiers (HT1104) to form precision instrumental amplifier and oscillator which is modulated by amplified signal from sensor. The output is square wave signal with variable duty cycle. The strain sensor was designed usingFEM (Finite Element Modeling) and uses piezoresistive SOI strain gauges or strain sensitive boron doped nanocrystalline layers (NCD).
Czech name
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Czech description
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Project
<a href="/en/project/VG20102015015" target="_blank" >VG20102015015: Miniature intelligent system for analyzing concentrations of gases and pollutants, particularly toxic</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Proceedings - Electronic Devices and Systems - EDS '13
ISBN
9788021447547
ISSN
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e-ISSN
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Number of pages
5
Pages from-to
133-137
Publisher name
Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií
Place of publication
Brno
Event location
Brno
Event date
Jun 26, 2013
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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