All

What are you looking for?

All
Projects
Results
Organizations

Quick search

  • Projects supported by TA ČR
  • Excellent projects
  • Projects with the highest public support
  • Current projects

Smart search

  • That is how I find a specific +word
  • That is how I leave the -word out of the results
  • “That is how I can find the whole phrase”

Point Defects in 4H-SiC Epilayers Introduced by 4.5 MeV Electron Irradiation and Their Effect on Power JBS SiC Diode Characteristics

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F14%3A00206368" target="_blank" >RIV/68407700:21230/14:00206368 - isvavai.cz</a>

  • Result on the web

    <a href="http://dx.doi.org/10.4028/www.scientific.net/SSP.205-206.451" target="_blank" >http://dx.doi.org/10.4028/www.scientific.net/SSP.205-206.451</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.4028/www.scientific.net/SSP.205-206.451" target="_blank" >10.4028/www.scientific.net/SSP.205-206.451</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Point Defects in 4H-SiC Epilayers Introduced by 4.5 MeV Electron Irradiation and Their Effect on Power JBS SiC Diode Characteristics

  • Original language description

    the paper deals with investigation of the point defects in 4H-SiC epilayers introduced by 4.5 MeV electron irradiation and their effects on power JBS SiC diode characteristics.

  • Czech name

  • Czech description

Classification

  • Type

    D - Article in proceedings

  • CEP classification

    JA - Electronics and optoelectronics

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/GAP102%2F12%2F2108" target="_blank" >GAP102/12/2108: Defects in Wide-Bandgap Semiconductors and Their Impact on Power and High-Temperature Electronics</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2014

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    Gettering and Defect Engineering in Semiconductor Technology XV

  • ISBN

    978-3-03785-824-0

  • ISSN

    1012-0394

  • e-ISSN

  • Number of pages

    6

  • Pages from-to

    451-456

  • Publisher name

    Trans Tech Publications

  • Place of publication

    Durnten-Zurich

  • Event location

    Oxford

  • Event date

    Sep 22, 2013

  • Type of event by nationality

    WRD - Celosvětová akce

  • UT code for WoS article

    000336338000067