Point Defects in 4H-SiC Epilayers Introduced by 4.5 MeV Electron Irradiation and Their Effect on Power JBS SiC Diode Characteristics

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F14%3A00206368" target="_blank" >RIV/68407700:21230/14:00206368 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.4028/www.scientific.net/SSP.205-206.451" target="_blank" >http://dx.doi.org/10.4028/www.scientific.net/SSP.205-206.451</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.4028/www.scientific.net/SSP.205-206.451" target="_blank" >10.4028/www.scientific.net/SSP.205-206.451</a>

Result language
angličtina
Original language name
Point Defects in 4H-SiC Epilayers Introduced by 4.5 MeV Electron Irradiation and Their Effect on Power JBS SiC Diode Characteristics
Original language description
the paper deals with investigation of the point defects in 4H-SiC epilayers introduced by 4.5 MeV electron irradiation and their effects on power JBS SiC diode characteristics.
Czech name
—
Czech description
—

Project
<a href="/en/project/GAP102%2F12%2F2108" target="_blank" >GAP102/12/2108: Defects in Wide-Bandgap Semiconductors and Their Impact on Power and High-Temperature Electronics</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Gettering and Defect Engineering in Semiconductor Technology XV
ISBN
978-3-03785-824-0
ISSN
1012-0394
e-ISSN
—
Number of pages
6
Pages from-to
451-456
Publisher name
Trans Tech Publications
Place of publication
Durnten-Zurich
Event location
Oxford
Event date
Sep 22, 2013
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000336338000067

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