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Functional sample of pixelated silicon detector sensor

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F16%3A00303864" target="_blank" >RIV/68407700:21230/16:00303864 - isvavai.cz</a>

  • Alternative codes found

    RIV/68407700:21340/16:00303864

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Functional sample of pixelated silicon detector sensor

  • Original language description

    Functional sample of pixelated silicon detector sensor. It contains 256 pixels arranged in a matrix of 16x16 pixels, each pixel is 1mm x 1mm large. It is manufactured on a high-resistivity p-type silicon wafer. It is designed primarily for X and gamma ray detection, but it can also be successfully applied for neutron detection with additional 6LiF conversion layer. Since it is pixelated sensor with 2D structures, it is DC coupled to the readout electronics. It contains an extensive guard ring structure, insulated floating p-stops between pixels. Back side is implanted with boron and metalized.

  • Czech name

  • Czech description

Classification

  • Type

    G<sub>funk</sub> - Functional sample

  • CEP classification

    JB - Sensors, detecting elements, measurement and regulation

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/TE01020069" target="_blank" >TE01020069: Advanced Detection Systems of Ionizing Radiation</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2016

  • Confidentiality

    C - Předmět řešení projektu podléhá obchodnímu tajemství (§ 504 Občanského zákoníku), ale název projektu, cíle projektu a u ukončeného nebo zastaveného projektu zhodnocení výsledku řešení projektu (údaje P03, P04, P15, P19, P29, PN8) dodané do CEP, jsou upraveny tak, aby byly zveřejnitelné.

Data specific for result type

  • Internal product ID

    TE01020069-2016V009

  • Numerical identification

    TE01020069-2016V009

  • Technical parameters

    Sensor die size is 18.06x18.06 mm^2 with a pixel matrix of 16x16 pixels, each pixel is 1mm x 1mm large. The voltage of full depletion was measured to be 145V. Capacitance of the channel is 0.15 pF. Sensor thickness is 525 microns, resulting dark current with 15 kOhmcm wafer resistivity is about 6 nA/cm^2 at room temperature.

  • Economical parameters

    Funkční vzorek je jedním z výstupů projektu č.TE01020069 "Progresivní detekční systémy ionizujícího záření" (Centrum kompetence).

  • Application category by cost

  • Owner IČO

    68407700

  • Owner name

    Fakulta jaderná a fyzikálně inženýrská

  • Owner country

    CZ - CZECH REPUBLIC

  • Usage type

    A - K využití výsledku jiným subjektem je vždy nutné nabytí licence

  • Licence fee requirement

    A - Poskytovatel licence na výsledek požaduje licenční poplatek

  • Web page