Characterization of pixel sensor designed in 180 nm SOI CMOS technology

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F18%3A00324709" target="_blank" >RIV/68407700:21230/18:00324709 - isvavai.cz</a>

Alternative codes found

RIV/68407700:21340/18:00324709

Result on the web

<a href="http://iopscience.iop.org/article/10.1088/1748-0221/13/01/C01025" target="_blank" >http://iopscience.iop.org/article/10.1088/1748-0221/13/01/C01025</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/1748-0221/13/01/C01025" target="_blank" >10.1088/1748-0221/13/01/C01025</a>

Result language

angličtina

Original language name

Characterization of pixel sensor designed in 180 nm SOI CMOS technology

Original language description

A new type of X-ray imaging Monolithic Active Pixel Sensor (MAPS), X-CHIP-02, was developed using a 180 nm deep submicron Silicon On Insulator (SOI) CMOS commercial technology. Two pixel matrices were integrated into the prototype chip, which differ by the pixel pitch of 50 μm and 100 μm. The X-CHIP-02 contains several test structures, which are useful for characterization of individual blocks. The sensitive part of the pixel integrated in the handle wafer is one of the key structures designed for testing. The purpose of this structure is to determine the capacitance of the sensitive part (diode in the MAPS pixel). The measured capacitance is 2.9 fF for 50 μm pixel pitch and 4.8 fF for 100 μm pixel pitch at -100 V (default operational voltage). This structure was used to measure the IV characteristics of the sensitive diode. In this work, we report on a circuit designed for precise determination of sensor capacitance and IV characteristics of both pixel types with respect to X-ray irradiation. The motivation for measurement of the sensor capacitance was its importance for the design of front-end amplifier circuits. The design of pixel elements, as well as circuit simulation and laboratory measurement techniques are described. The experimental results are of great importance for further development of MAPS sensors in this technology.

Czech name

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Czech description

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Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

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OECD FORD branch

20201 - Electrical and electronic engineering

Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Publication year

2018

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Journal of Instrumentation

ISSN

1748-0221

e-ISSN

1748-0221

Volume of the periodical

13

Issue of the periodical within the volume

01

Country of publishing house

GB - UNITED KINGDOM

Number of pages

11

Pages from-to

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UT code for WoS article

000422899200008

EID of the result in the Scopus database

2-s2.0-85041855175