MAPS sensor for radiation imaging designed in 180 nm SOI CMOS technology

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F18%3A00501816" target="_blank" >RIV/68378271:_____/18:00501816 - isvavai.cz</a>
Alternative codes found
RIV/68407700:21340/18:00324690
Result on the web
<a href="http://dx.doi.org/10.1088/1748-0221/13/06/C06004" target="_blank" >http://dx.doi.org/10.1088/1748-0221/13/06/C06004</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/1748-0221/13/06/C06004" target="_blank" >10.1088/1748-0221/13/06/C06004</a>

Result language
angličtina
Original language name
MAPS sensor for radiation imaging designed in 180 nm SOI CMOS technology
Original language description
In thiswork, we present a prototype of the MonolithicActive Pixel Sensor (MAPS) called X-CHIP-02 designed in 180 nm SOI CMOS technology. The selected technology has attractive features for fabrication of X-ray imaging sensors: 100 Omega.cm handle wafer resistivity, thick epitaxial layer to suppress back-gate effect, support of high voltage devices and deep trench isolation. X-CHIP-02 has two pixel matrices with the pixel pitch of 50 mu m and 100 mu m with integrated 8-bit photon counting circuitry. Fine pitch SOI monolithic pixels imply small capacitance and thus small electronic noise of approximate to 50 e(-). Design of the sensor chip and basic radiation imaging capabilities are described in this paper.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10304 - Nuclear physics

Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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