Operation of 4H-SiC high voltage normally-OFF V-JFET in radiation hard conditions: Simulations and experiment
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F17%3A00311708" target="_blank" >RIV/68407700:21230/17:00311708 - isvavai.cz</a>
Result on the web
<a href="http://www.sciencedirect.com/science/article/pii/S0026271417301464" target="_blank" >http://www.sciencedirect.com/science/article/pii/S0026271417301464</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.microrel.2017.05.015" target="_blank" >10.1016/j.microrel.2017.05.015</a>
Alternative languages
Result language
angličtina
Original language name
Operation of 4H-SiC high voltage normally-OFF V-JFET in radiation hard conditions: Simulations and experiment
Original language description
This paper deals with the operation of neutron irradiated 1700V SiC V-JFET in proposed DC-DC converters. The influence of irradiated V-JFET on the function of DC-DC converters are investigated. The measured results are compared with TCAD MixedMode simulation.
Czech name
—
Czech description
—
Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
20201 - Electrical and electronic engineering
Result continuities
Project
—
Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2017
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Microelectronics Reliability
ISSN
0026-2714
e-ISSN
—
Volume of the periodical
74
Issue of the periodical within the volume
July
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
9
Pages from-to
58-66
UT code for WoS article
000404308900009
EID of the result in the Scopus database
2-s2.0-85020452602