Current Limiting Driver for GaN Half-Bridge

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F17%3A00314054" target="_blank" >RIV/68407700:21230/17:00314054 - isvavai.cz</a>
Result on the web
<a href="http://ieeexplore.ieee.org/document/8053619/" target="_blank" >http://ieeexplore.ieee.org/document/8053619/</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.23919/AE.2017.8053619" target="_blank" >10.23919/AE.2017.8053619</a>

Result language
angličtina
Original language name
Current Limiting Driver for GaN Half-Bridge
Original language description
This paper presents a GaN transistor half-bridge prototype with robust pulse by pulse current limiting drivers designed to turn off safely the transistor for the rest of the PWM period when the drain current exceeds the set value. The half-bridge is intended as the key part of a DC/AC converter output stage with operating frequency up to 1 MHz. The current limiting circuit is designed to meet the requirements for safe operation of GaN transistors. The proposed current limiting driver is five times faster compared to common integrated drivers with included current limiting circuit.
Czech name
—
Czech description
—

Publication year
2017
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
22nd 2017 International Conference on Applied Electronics
ISBN
978-80-261-0641-8
ISSN
1803-7232
e-ISSN
1803-7232
Number of pages
4
Pages from-to
227-230
Publisher name
University of West Bohemia
Place of publication
Pilsen
Event location
Pilsen
Event date
Sep 5, 2017
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000427091900044

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