Influence of Deadtime on Si, SiC and GaN Converters

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F20%3A00343541" target="_blank" >RIV/68407700:21230/20:00343541 - isvavai.cz</a>
Result on the web
<a href="https://ieeexplore.ieee.org/document/9269208" target="_blank" >https://ieeexplore.ieee.org/document/9269208</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/EPE51172.2020.9269208" target="_blank" >10.1109/EPE51172.2020.9269208</a>

Result language
angličtina
Original language name
Influence of Deadtime on Si, SiC and GaN Converters
Original language description
This paper presents a comparison of three different transistor technologies Silicon Superjunction (Si SJ), Silicon Carbide (SiC) and Gallium Nitride (GaN) in respect to deadtime setting in a typical halfbridge converter. According to the measured results both new fast switching transistors SiC and GaN needs precise deadtime setting compared to the Si SJ devices. With wrong deadtime settings the converter efficiency drops more rapidly for GaN compared to SiC while the Si SJ device is the least affected by the deadtime length. The optimum deadtime in DC/DC converter can be found by tracking the maximum output voltage for given constant and compensated duty cycle and input voltage.
Czech name
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Czech description
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Publication year
2020
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
2020 21st International Scientific Conference on Electric Power Engineering (EPE)
ISBN
978-1-7281-9479-0
ISSN
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e-ISSN
—
Number of pages
4
Pages from-to
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Publisher name
Czechoslovakia Section IEEE
Place of publication
Prague
Event location
Prague
Event date
Oct 19, 2020
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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