Benefits of Using the New 1200V Si IGBT and SiC MOSFET Modules for E-Bus Application

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F22%3A00358040" target="_blank" >RIV/68407700:21230/22:00358040 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.30420/565822271" target="_blank" >https://doi.org/10.30420/565822271</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.30420/565822271" target="_blank" >10.30420/565822271</a>

Result language
angličtina
Original language name
Benefits of Using the New 1200V Si IGBT and SiC MOSFET Modules for E-Bus Application
Original language description
The submitted paper presents the results of analysis of current requirements of propulsion inverters for E – Bus powered by batteries up to 750 V DC, comparison of performance of modern 1200V V Si IGBT and SiC MOSFET modules in half bridge topology and evaluation of their benefits when used in main propulsion inverters. Using simulations of power losses and temperatures, it investigates the performance of both types of power modules depending on the switching frequency. The advantage of using SiC modules in a traction converter operating with an optimal switching frequency to achieve maximum power conversion efficiency of the entire traction drive is discussed here.
Czech name
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Czech description
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Publication year
2022
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
ISBN
978-3-8007-5822-7
ISSN
2191-3358
e-ISSN
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Number of pages
6
Pages from-to
1962-1967
Publisher name
VDE Verlag
Place of publication
Berlin
Event location
Nuremberg
Event date
May 10, 2022
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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