Fast Recovery Diodes for High-Current High-Voltage Insulated Gate Bipolar Transistors

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F22%3A00358621" target="_blank" >RIV/68407700:21230/22:00358621 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1109/LED.2022.3187159" target="_blank" >https://doi.org/10.1109/LED.2022.3187159</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/LED.2022.3187159" target="_blank" >10.1109/LED.2022.3187159</a>

Result language
angličtina
Original language name
Fast Recovery Diodes for High-Current High-Voltage Insulated Gate Bipolar Transistors
Original language description
Silicon Fast Recovery Diodes of 4.5 kV class were produced with diameter of active area between 100 and 150 mm. Wide Safe Operation Area is experimentally demonstrated with IGBT operated at di/dt above 4 kA/μs for which diode recovery losses and peak power show decreasing trend above the diode average rating current of 5 kA, which is half of Insulated Gate Bipolar Transistor (IGBT) short circuit current. The role of IGBT switch and diode design on the robustness enhanced by increased diode area, is explained. The experimental results are confirmed by device simulation (TCAD).
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20201 - Electrical and electronic engineering

Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2022
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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