Two-Dimensional Device Simulation for the Design Optimization of a Bidirectional Phase Control Thyristor

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F25%3A00383045" target="_blank" >RIV/68407700:21230/25:00383045 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1109/TED.2025.3554134" target="_blank" >https://doi.org/10.1109/TED.2025.3554134</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/TED.2025.3554134" target="_blank" >10.1109/TED.2025.3554134</a>

Result language
angličtina
Original language name
Two-Dimensional Device Simulation for the Design Optimization of a Bidirectional Phase Control Thyristor
Original language description
The operation of 8.5-kV bidirectional phase control thyristor (BiPCT) is analyzed using calibrated device simulation (TCAD) with the goal of improving the tradeoff between the ON-state and turn-off losses. To cope with the specifics of the BiPCT in 2-D approximation, a special approach to turn the device from the forward blocking regime to the ON-state is introduced. The simulated characteristics of investigated design variants are compared with the ones measured on real devices produced on 100-mm silicon wafers. Both unirradiated and proton irradiated devices are discussed.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20201 - Electrical and electronic engineering

Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2025
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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