Device Simulation of a Bidirectional Phase Control Thyristor

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F25%3A00385241" target="_blank" >RIV/68407700:21230/25:00385241 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Device Simulation of a Bidirectional Phase Control Thyristor
Original language description
The operation of Bidirectional Phase Control Thyristor (BiPCT) is analyzed using calibrated device simulation (TCAD). Because of too large high-voltage device domain for 3-D simulation, a special 2-D approach to turn the device from the forward blocking regime to the ON-state has been used. The calibration of the simulation is carried out from the ON-state IV curves and commutation turn-off waveforms measured on real devices produced on 100 mm silicon wafers. Both unirradiated and proton irradiated devices are covered. Two operation modes of the BiPCT are investigated in more details: a) AC switch turned on by single gate pulse remaining permanently in the ON-state, and b) bidirectional thyristor with as high commutation di/dt capability as possible.
Czech name
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Czech description
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Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2025
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
ISPS'25 PROCEEDINGS
ISBN
979-8-3315-5732-4
ISSN
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e-ISSN
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Number of pages
5
Pages from-to
155-159
Publisher name
Czech Technical University in Prague, Faculty of Electrical Engineering
Place of publication
Prague
Event location
Praha
Event date
Aug 27, 2025
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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