Automatic detection and characterization of random telegraph noise in sCMOS sensors

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F25%3A00383948" target="_blank" >RIV/68407700:21230/25:00383948 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1117/12.3056499" target="_blank" >https://doi.org/10.1117/12.3056499</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1117/12.3056499" target="_blank" >10.1117/12.3056499</a>

Result language
angličtina
Original language name
Automatic detection and characterization of random telegraph noise in sCMOS sensors
Original language description
Scientific CMOS (sCMOS) image sensors are a modern alternative to typical CCD detectors and are rapidly gaining popularity in observational astronomy due to their large sizes, low read-out noise, high frame rates, and cheap manufacturing. However, numerous challenges remain in using them due to fundamental differences between CCD and CMOS architectures, especially concerning the pixel-dependent and non-Gaussian nature of their read-out noise. One of the main components of the latter is the random telegraph noise (RTN) caused by the charge traps introduced by the defects close to the oxide-silicon interface in sCMOS image sensors which manifests itself as discrete jumps in a pixel's output signal, degrading the overall image fidelity. In this work, we present a statistical method to detect and characterize RTN-affected pixels using a series of dark frames. Identifying RTN contaminated pixels enables post-processing strategies that mitigate their impact and the development of manufacturing quality metrics.
Czech name
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Czech description
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Publication year
2025
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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