Silicon nanophotonic waveguides using rare earth ion diffusion technology

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F25%3A00386056" target="_blank" >RIV/68407700:21230/25:00386056 - isvavai.cz</a>
Result on the web
<a href="https://www.spiedigitallibrary.org/conference-proceedings-of-spie/13698.toc" target="_blank" >https://www.spiedigitallibrary.org/conference-proceedings-of-spie/13698.toc</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1117/12.3075110" target="_blank" >10.1117/12.3075110</a>

Result language
angličtina
Original language name
Silicon nanophotonic waveguides using rare earth ion diffusion technology
Original language description
The paper presents the design of a silicon-based nanophotonic active optical waveguide, in which rare earth ions are diffused into enhanced passive waveguides fabricated on a silicon-on-insulator (SOI) platform. Since erbium (Er)-doped waveguides can provide a higher gain coefficient in an Al₂O₃ waveguide cladding, a novel approach is proposed to further enhance the gain of an erbium-doped waveguide amplifier (EDWA). This method utilizes a subwavelength waveguide structure, where a film surrounds the segmented SOI waveguide. The proposed approach enables improved gain performance in widely used SOI waveguides by leveraging the advantages of an Er-doped Al₂O₃ layer.
Czech name
—
Czech description
—

Publication year
2025
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Proc. SPIE 13698, Photonics, Devices, and Systems IX
ISBN
978-1-5106-9345-6
ISSN
0277-786X
e-ISSN
1996-756X
Number of pages
3
Pages from-to
—
Publisher name
The International Society for Optical Engineering (SPIE)
Place of publication
Bellingham WA
Event location
Prague
Event date
Jun 9, 2025
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
001723559900031

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