Temperature Dependence of the Optical Absorption Coefficient of Microcrystalline Silicon

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F03%3A04092640" target="_blank" >RIV/68407700:21340/03:04092640 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Temperature Dependence of the Optical Absorption Coefficient of Microcrystalline Silicon

Original language description

Optical absorption coefficient of amorphous and microcrystalline silicon was determined in a spectral range 400-3100 nm and temperature range 77-350 K. Transmittance measurement and Fourier transform photocurrent spectroscopy were used. The measured dataserved as an input for our optical model of amorphous/microcrystalline solar cell tandem. Differences in the current generated in the amorphous and the microcrystalline parts were computed, for the operation temperature between -20 °C and + 80 °C. Optical spectra of microcrystalline silicon were compared to the spectrum of silicon on sapphire (without hydrogen and hydrogenated) and observed difference was interpreted in terms of a different defect density and higher disorder of microcrystalline Si.

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2003

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

Abstracts of the ICAMS 20th - Science and Technology

ISBN

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ISSN

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e-ISSN

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Number of pages

1

Pages from-to

112-112

Publisher name

Brasilian Microelectronics Society

Place of publication

Sao Paulo

Event location

Campos do Jordao

Event date

Aug 25, 2003

Type of event by nationality

WRD - Celosvětová akce

UT code for WoS article

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