Degradation Study of Microcrystalline Silicon

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F03%3A04092642" target="_blank" >RIV/68407700:21340/03:04092642 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Degradation Study of Microcrystalline Silicon

Original language description

Microcrystalline silicon has been suggested as an optimal low-gap material for tandem solar cells with amorphous hydrogenated silicon. As a big difference between the material properties of amorphous and microcrystalline silicon, the latter has been considered to be stable with no degradation effect observed so far on solar cells. On the other hand, most of the research teams working in the area of ?c-Si:H deposition and characterisation have already found that "optimal" microcrystalline silicon structure for solar cells is deposited close to the amorphous - microcrystalline transition. Substantial amorphous fraction in these films leads to the question whether such material is really stable.

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2003

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

Abstracts of the ICAMS 20th - Science and Technology

ISBN

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ISSN

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e-ISSN

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Number of pages

1

Pages from-to

64-64

Publisher name

Brasilian Microelectronics Society

Place of publication

Sao Paulo

Event location

Campos do Jordao

Event date

Aug 25, 2003

Type of event by nationality

WRD - Celosvětová akce

UT code for WoS article

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