Optical modeling of microcrystalline silicon deposited by plasma-enhanced chemical vapor deposition on low-cost iron-nickel substrates for photovoltaic applications

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989100%3A27640%2F16%3A86098477" target="_blank" >RIV/61989100:27640/16:86098477 - isvavai.cz</a>

Result on the web

<a href="http://www.sciencedirect.com/science/article/pii/S2211812816000328" target="_blank" >http://www.sciencedirect.com/science/article/pii/S2211812816000328</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.mspro.2016.03.023" target="_blank" >10.1016/j.mspro.2016.03.023</a>

Result language

angličtina

Original language name

Optical modeling of microcrystalline silicon deposited by plasma-enhanced chemical vapor deposition on low-cost iron-nickel substrates for photovoltaic applications

Original language description

This paper deals with the optical modeling of thin hydrogenated microcrystalline silicon films grown on flexible low-cost iron-nickel alloy substrates by low-temperature (175 degrees C) plasma-enhanced chemical vapor deposition. This material serves as the absorber in solar cells and hence it has direct impact on the resulting solar cell performance. Since the crystallinity and the material quality of hydrogenated microcrystalline silicon films evolve during the growth, the deposited film is inhomogeneous, with a rather complex structure. Real-time spectroscopic ellipsometry has been used to trace the changing composition of the films. In-situ ellipsometric data taken for photon energies from 2.8 to 4.5 eV every 50 seconds enabled us to study the evolution of the monocrystalline silicon fraction of the hydrogenated microcrystalline silicon films.

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

BH - Optics, masers and lasers

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Publication year

2016

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

Procedia Materials Science. Volume 12

ISBN

—

ISSN

2211-8128

e-ISSN

—

Number of pages

6

Pages from-to

130-135

Publisher name

Elsevier

Place of publication

Amsterdam

Event location

Ostrava

Event date

Sep 8, 2014

Type of event by nationality

WRD - Celosvětová akce

UT code for WoS article

000386622900023