Crystalline composition of silicon deposited on a low-cost substrate for photovoltaic applications studied by in-situ spectroscopic ellipsometry
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989100%3A27350%2F14%3A86090889" target="_blank" >RIV/61989100:27350/14:86090889 - isvavai.cz</a>
Alternative codes found
RIV/61989100:27740/14:86090889 RIV/61989100:27640/14:86090889
Result on the web
<a href="http://dx.doi.org/10.1117/12.2176098" target="_blank" >http://dx.doi.org/10.1117/12.2176098</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1117/12.2176098" target="_blank" >10.1117/12.2176098</a>
Alternative languages
Result language
angličtina
Original language name
Crystalline composition of silicon deposited on a low-cost substrate for photovoltaic applications studied by in-situ spectroscopic ellipsometry
Original language description
This paper deals with the study of thin silicon films deposited by plasma-enhanced chemical vapor deposition on the industrial iron-nickel alloy substrate. This approach is promising for fabrication of low-cost high-efficiency solar cells. The main aim is to characterize the intrinsic hydrogenated microcrystalline silicon layer which fulfills its role of the absorber and has a direct impact on the solar cell performance. The real-time ellipsometric data obtained during the material deposition in the reactor are used to study the composition of the grown material. Based on the designed optical model, the evolution of the material crystallinity as well as the thickness and composition of the surface roughness layer are established in addition to an estimation of the average growth rate. Transmission electron microscopy was used to obtain the images of material structure and to verify conclusions of optical modeling.
Czech name
—
Czech description
—
Classification
Type
D - Article in proceedings
CEP classification
BH - Optics, masers and lasers
OECD FORD branch
—
Result continuities
Project
<a href="/en/project/ED1.1.00%2F02.0070" target="_blank" >ED1.1.00/02.0070: IT4Innovations Centre of Excellence</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach
Others
Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings of SPIE. Volume 9441
ISBN
978-1-62841-556-8
ISSN
0277-786X
e-ISSN
—
Number of pages
6
Pages from-to
"94411F"
Publisher name
SPIE
Place of publication
Bellingham
Event location
Wojanow Palace
Event date
Sep 8, 2014
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000349332600050