Four Micron Radiation Generated by Dysprosium Doped Lead Thiogallate Laser

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F10%3A00168311" target="_blank" >RIV/68407700:21340/10:00168311 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Four Micron Radiation Generated by Dysprosium Doped Lead Thiogallate Laser
Original language description
The lead thiogallate (PbGa2S4) crystal doped with trivalent dysprosium ions was used as a laser active medium for obtaining radiation in mid-IR spectral region. To prove in-band pumping, the Er:YAP laser generating 1.66 um radiation was used. The Dy:PbGa2S4 laser was working at room temperature without any cooling. Three Dy:PbGa2S4 active crystals were investigated. The maximal reached output energy was as high as 275 uJ for the optimal mirror reflectance and the best Dy:PbGa2S4 crystal. The incident pumping energy was 132 mJ. The measured output radiation wavelength was 4332 nm with the spectral width of 62 nm. From the point of efficiency it was recognized that the in-band pumping directly into 6H11/2 level results in decrease of lasing threshold andincrease of slope efficiency.
Czech name
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Czech description
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Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Proceedings of SPIE Vol.7578 - Solid State Lasers XIX: Technology and Devices
ISBN
978-0-8194-7974-7
ISSN
0277-786X
e-ISSN
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Number of pages
5
Pages from-to
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Publisher name
SPIE
Place of publication
Washington
Event location
San Francisco
Event date
Jan 23, 2010
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000284936100063

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