Pr:YAlO3 and Pr:LiYF4 Laser Emission Comparison under GaN Laser Diode Pumping
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F10%3A00168313" target="_blank" >RIV/68407700:21340/10:00168313 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Pr:YAlO3 and Pr:LiYF4 Laser Emission Comparison under GaN Laser Diode Pumping
Original language description
In this paper we report on comparison of laser results reached by Pr-doped oxide and fluoride crystals under GaN-laser diode pumping at room temperature. As oxide and fluoride crystal representatives, Pr:YAlO3 (Pr:YAP) and Pr:LiYF4 (Pr:YLF) crystals wereused. Pumping was accomplished by multimode GaN-laser diodes capable of providing output powers of up to 1W at wavelengths corresponding with Pr:YAP and Pr:YLF absorption peaks. For both samples, efficient stimulated emission in the red laser transitionhas been demonstrated, and laser results regarding the output power, threshold, and slope efficiency with respect to the absorbed power have been compared.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
BH - Optics, masers and lasers
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings of SPIE Vol.7578 - Solid State Lasers XIX: Technology and Devices
ISBN
978-0-8194-7974-7
ISSN
0277-786X
e-ISSN
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Number of pages
6
Pages from-to
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Publisher name
SPIE
Place of publication
Washington
Event location
San Francisco
Event date
Jan 23, 2010
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000284936100066