Real Time NDE 3D Image Sensor for Harsh Electromagnetic Environment

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F10%3A00177369" target="_blank" >RIV/68407700:21340/10:00177369 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Real Time NDE 3D Image Sensor for Harsh Electromagnetic Environment
Original language description
The vital demand for contemporary industry of real time NDE sensors is in field operation, which often surrounded by harsh electromagnetic environment such as high level EMI fields or high level of X-Ray or nuclear radiation. Contemporary CCD image sensors are highly vulnerable even for 0.5 volt EMI fields and highly vulnerable for x-ray and gamma radiation. The high lever radiation such as 50keV, 100kev, 150keV, 200keV, 300keV, 420keV, is extremely dangerous for human body. CCD image sensors are vulnerable to that radiation level. We proposed doped single crystal 3D image sensor for the real time NDE measurement. Proposed sensor was not vulnerable to electromagnetic field produced by High Voltage Tesla generator and to the high level X-ray radiation:50keV, 100kev, 150keV 200keV, 300keV, 420keV. Vulnerability and degradation of CCD image sensor to 40keV and 50keV X-Ray radiation was demonstrated and documented.
Czech name
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Czech description
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Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Sensors and Smart Structures Technologies for Civil, Mechanical, and Aerospace Systems 2010 (Proceedings Volume)
ISBN
978-0-8194-8062-0
ISSN
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e-ISSN
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Number of pages
10
Pages from-to
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Publisher name
SPIE - The International Society for Optical Engineering
Place of publication
Washington
Event location
San Diego
Event date
Mar 7, 2010
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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